GT80J101A Description
GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Voltage:.
- Part: GT80J101A
- Manufacturer: Toshiba
- Size: 136.18 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| GT80J101 | Silicon N-Channel MOSFET |
| GT80J101B | Silicon N-Channel IGBT |
| GT8G103 | Silicon N-Channel MOSFET |
| GT8G121 | Silicon N-Channel MOSFET |
| GT8G131 | Silicon N-Channel MOSFET |