Datasheet4U Logo Datasheet4U.com

GT80J101B - Silicon N-Channel IGBT

📥 Download Datasheet

Datasheet preview – GT80J101B

📁 Similar Datasheet

  • GT8002 - LCD MODULE (Jewel Hill Electronic)
  • GT800N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • GT800N10L - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • GT811 - Toxic Gas Sensor Manual (SAFETY SYSTEMS TECHNOLOGY)
  • GT811 - Small MID capacitive screen controller (Goodix)
  • GT813 - 5 capacitive touch (Goodix)
  • GT818 - Smart phones 5:00 capacitive screen controller (Goodix)
  • GT828 - A 5-point Touch (Goodix)
  • GT8G101 - Silicon N-Channel MOSFET (ETC)
  • GT8G151 - Silicon N-Channel IGBT (Toshiba)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications • • • Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current @Tc = 100°C @Tc = 25°C Symbol VCES VGES IC ICP Rating 600 ± 20 33 80 160 80 PC 200 3.5 Tj Tstg  150 − 55~150 0.8 °C °C N·m W A Unit V V A Pulsed collector current (Note 1) @Tc = 100°C Collector power dissipation Junction temperature Storage temperature Screw torque @Tc = 25°C @Ta = 25°C JEDEC JEITA TOSHIBA ? ? 2-21F2C Weight: 9.75 g (typ.) Note 1: The Maximum rating of ICP=160A is limited by pulse (1ms).
Published: |