| Part number | GT80J101B |
|---|---|
| Download | GT80J101B Datasheet (PDF) |
| File Size | 65.40 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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| Part Number | Description |
|---|---|
| GT80J101 | Silicon N-Channel MOSFET |
| GT80J101A | Silicon N-Channel IGBT |
| GT8G103 | Silicon N-Channel MOSFET |
| GT8G121 | Silicon N-Channel MOSFET |
| GT8G131 | Silicon N-Channel MOSFET |
GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Unit:.
