| Part number | GT80J101B |
|---|---|
| Datasheet | GT80J101B-ToshibaSemiconductor.pdf |
| File Size | 65.40 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
|
|
GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Unit:.
| Part Number | Description |
|---|---|
| GT80J101 | Silicon N-Channel MOSFET |
| GT80J101A | Silicon N-Channel IGBT |
| GT8G103 | Silicon N-Channel MOSFET |
| GT8G121 | Silicon N-Channel MOSFET |
| GT8G131 | Silicon N-Channel MOSFET |
| GT8G132 | Silicon N-Channel IGBT |
| GT8G133 | Silicon N-Channel IGBT |
| GT8G134 | Silicon N-Channel IGBT |
| GT8G136 | Silicon N-Channel IGBT |
| GT8J101 | Silicon N-Channel IGBT |
