Datasheet Summary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
High Power Switching Applications
- -
- Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current @Tc = 100°C @Tc = 25°C Symbol VCES VGES IC ICP Rating 600 ± 20 33 80 160 80 PC 200 3.5 Tj Tstg 150
- 55~150 0.8 °C °C N- m W A Unit V V A
Pulsed collector current (Note 1) @Tc = 100°C Collector power dissipation Junction temperature Storage temperature Screw torque @Tc = 25°C @Ta = 25°C
JEDEC JEITA TOSHIBA
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