Datasheet Summary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Strobe Flash Applications
Unit: mm
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- Supplied in pact and Thin Package Requires Only a Small Mounting Area 4th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms Symbol VCES VGES VGES IC ICP PC Tj Tstg Rating 400 ±6 ±8 8 150 1.1 150 -55~150 2 Unit V V
Collector current
A W °C °C
Collector power dissipation (Note 1) Junction temperature Storage temperature range
JEDEC JEITA TOSHIBA
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