| Part number | GT8G131 |
|---|---|
| Datasheet | GT8G131_ToshibaSemiconductor.pdf |
| File Size | 211.99 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel MOSFET |
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GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm · · · · · Supplied in pact and Thin Package Requires Only a Small Mounting Area 4th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current:.
| Part Number | Description |
|---|---|
| GT8G132 | Silicon N-Channel IGBT |
| GT8G133 | Silicon N-Channel IGBT |
| GT8G134 | Silicon N-Channel IGBT |
| GT8G136 | Silicon N-Channel IGBT |
| GT8G103 | Silicon N-Channel MOSFET |
| GT8G121 | Silicon N-Channel MOSFET |
| GT80J101 | Silicon N-Channel MOSFET |
| GT80J101A | Silicon N-Channel IGBT |
| GT80J101B | Silicon N-Channel IGBT |
| GT8J101 | Silicon N-Channel IGBT |
