| Part number | GT8G136 |
|---|---|
| Datasheet | GT8G136-ToshibaSemiconductor.pdf |
| File Size | 201.18 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications pact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Ta=70℃(max))/ Unit: Using continuously under heavy loads (e.g.
| Part Number | Description |
|---|---|
| GT8G131 | Silicon N-Channel MOSFET |
| GT8G132 | Silicon N-Channel IGBT |
| GT8G133 | Silicon N-Channel IGBT |
| GT8G134 | Silicon N-Channel IGBT |
| GT8G103 | Silicon N-Channel MOSFET |
| GT8G121 | Silicon N-Channel MOSFET |
| GT80J101 | Silicon N-Channel MOSFET |
| GT80J101A | Silicon N-Channel IGBT |
| GT80J101B | Silicon N-Channel IGBT |
| GT8J101 | Silicon N-Channel IGBT |
