Datasheet Summary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Strobe Flash Applications
- -
- pact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Ta=70℃(max))/ Unit:...
- Part: GT8G136
- Description: Silicon N-Channel IGBT
- Manufacturer: Toshiba
- Size: 201.18 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| GT8G131 | Silicon N-Channel MOSFET |
| GT8G132 | Silicon N-Channel IGBT |
| GT8G133 | Silicon N-Channel IGBT |
| GT8G134 | Silicon N-Channel IGBT |
| GT8G103 | Silicon N-Channel MOSFET |