| Part number | GT8G134 |
|---|---|
| Datasheet | GT8G134-ToshibaSemiconductor.pdf |
| File Size | 201.45 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
|
|
GT8G134 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G134 Strobe Flash Applications pact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=2.5V(min))/ Unit: Using continuously under heavy loads (e.g.
| Part Number | Description |
|---|---|
| GT8G131 | Silicon N-Channel MOSFET |
| GT8G132 | Silicon N-Channel IGBT |
| GT8G133 | Silicon N-Channel IGBT |
| GT8G136 | Silicon N-Channel IGBT |
| GT8G103 | Silicon N-Channel MOSFET |
| GT8G121 | Silicon N-Channel MOSFET |
| GT80J101 | Silicon N-Channel MOSFET |
| GT80J101A | Silicon N-Channel IGBT |
| GT80J101B | Silicon N-Channel IGBT |
| GT8J101 | Silicon N-Channel IGBT |
