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GT8G132 - Silicon N-Channel IGBT

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www.DataSheet4U.com GT8G132 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G132 Strobe Flash Applications Unit: mm • • • • • Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms (Note 1) Symbol VCES VGES VGES IC ICP PC Tj Rating 400 ±6 ±8 8 150 1.1 Unit V V Collector current Collector power dissipation Junction temperature A W JEDEC JEITA ― ― 2-6J1C Storage temperature range www.DataSheet4U.
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