Datasheet4U Logo Datasheet4U.com

GT8G133 - Silicon N-Channel IGBT

📥 Download Datasheet

Datasheet preview – GT8G133

📁 Similar Datasheet

  • GT8G101 - Silicon N-Channel MOSFET (ETC)
  • GT8G151 - Silicon N-Channel IGBT (Toshiba)
  • GT8002 - LCD MODULE (Jewel Hill Electronic)
  • GT800N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • GT800N10L - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • GT811 - Toxic Gas Sensor Manual (SAFETY SYSTEMS TECHNOLOGY)
  • GT811 - Small MID capacitive screen controller (Goodix)
  • GT813 - 5 capacitive touch (Goodix)
  • GT818 - Smart phones 5:00 capacitive screen controller (Goodix)
  • GT828 - A 5-point Touch (Goodix)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications • • • • Compact and Thin (TSSOP-8) package Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation（t＝10 s） Junction temperature Storage temperature range DC Pulse Pulse (Note 1) (Note 2a) (Note 2b) Symbol VCES VGES VGES ICP PC (1) PC (2) Tj Tstg Rating 400 ±6 ±8 150 1.1 0.6 150 −55~150 Unit V V A W W °C °C 1.2.3 EMITTER 4 GATE 5.6.7.8 COLLECTOR Note: Using continuously under heavy loads (e.g.
Published: |