GT80J101A Description
GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Voltage:.
GT80J101A Datasheet
| Part number | GT80J101A |
|---|---|
| Download | GT80J101A Datasheet (PDF) |
| File Size | 136.18 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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