Datasheet Summary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
High Power Switching Applications
Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A)
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- Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg ¾ Rating 600 ±20 80 160 200 150 -55~150 0.8 Unit V V A W °C °C N- m
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature Screw torque
JEDEC JEITA TOSHIBA
― ― 2-21F2C
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector...