| Description | JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Low Series Resistance: rs = 0.5 Ω (typ.) · · · Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1G1A Electrica... |
| Features |
.5 0.4 0.3 0.2 0.1 0 0.1
Capacitance CV
1
10
Reverse voltage VR
(V)
Reverse voltage VR
(V)
2
2002-01-16
JDV2S01E
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent elec... |
| Datasheet |
 JDV2S01E Datasheet - 87.84KB |
