JDV2S13FS
TOSHIBA Diode Silicon Epitaxial Planar Type
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VCO for the UHF band
- -
- High capacitance ratio: C1V/C4V = 2.8 (typ.) Low series resistance: rs = 0.55 Ω (typ.) This device is suitable for use in a small-size tuner.
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Unit: mm
0.6±0.05 0.1 0.8±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150
- 55~150 Unit V °C °C
0.2 ±0.05
0.1±0.05
0.48 +0.02 -0.03
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and...
