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K1119 - 2SK1119

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2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.) z Low leakage current : IDSS = 300 µA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.5~3.
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