K1365 Datasheet - Toshiba Semiconductor

K1365 2SK1365

2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSII.5) 2SK1365 Switching Power Supply Applications z Low drain source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage Dra.

K1365-ToshibaSemiconductor.pdf