Part K1358
Description Silicon N-Channel MOSFET
Category MOSFET
Manufacturer Toshiba
Size 568.20 KB
K1358 Datasheet (PDF) Download
Toshiba
K1358

Overview

  • Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.)
  • High Forward Transfer Admittance - Yfs = 4.0S (Typ.)
  • Low Leakage Current - IDSS = 300µA (Max.) @ VDS = 720V
  • Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA
K1358 datasheet preview

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K1358 Datasheet