K1358 Overview
TOSHIBA Discrete Semiconductors Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications.
K1358 Key Features
- Low Drain-Source ON Resistance
- RDS(ON) = 1.1Ω (Typ.)
- High Forward Transfer Admittance
- Yfs = 4.0S (Typ.)
- Low Leakage Current
- IDSS = 300µA (Max.) @ VDS = 720V
- Enhancement-Mode
- Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA
