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K1358 Datasheet Silicon N-channel MOSFET

Manufacturer: Toshiba

Overview: TOSHIBA Discrete Semiconductors Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.

Key Features

  • Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ. ).
  • High Forward Transfer Admittance - Yfs = 4.0S (Typ. ).
  • Low Leakage Current - IDSS = 300µA (Max. ) @ VDS = 720V.
  • Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C).

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