K1358 Datasheet and Specifications PDF

The K1358 is a Silicon N-Channel MOSFET.

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Part NumberK1358 Datasheet
ManufacturerToshiba
Overview TOSHIBA Discrete Semiconductors Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Dr.
* Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.)
* High Forward Transfer Admittance - Yfs = 4.0S (Typ.)
* Low Leakage Current - IDSS = 300µA (Max.) @ VDS = 720V
* Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING .
Part NumberK1358 Datasheet
DescriptionN-Channel MOSFET Transistor
ManufacturerInchange Semiconductor
Overview ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM. TIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 VSD Diode Forward Vo.