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K1358 - N-Channel MOSFET Transistor

General Description

Drain Current ID= 9A@ TC=25℃ Drain Source Voltage- : VDSS= 900V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (V

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1358 DESCRIPTION ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 900 ±30 Drain Current-continuous@ TC=25℃ 9 Total Dissipation@TC=25℃ 150 Max. Operating Junction Temperature 150 Storage Temperature Range -55~150 V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 0.833 ℃/W Thermal Resistance,Junction to Ambient 50 ℃/W isc website：www.iscsemi.