Datasheet Details
| Part number | K1358 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 60.94 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | K1358-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | K1358 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 60.94 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | K1358-INCHANGE.pdf |
|
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·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 900 ±30 Drain Current-continuous@ TC=25℃ 9 Total Dissipation@TC=25℃ 150 Max.
Operating Junction Temperature 150 Storage Temperature Range -55~150 V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 0.833 ℃/W Thermal Resistance,Junction to Ambient 50 ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK1358 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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K1358 | Silicon N-Channel MOSFET | Toshiba Semiconductor |
| Part Number | Description |
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