K1358 Overview
Key Features
- Low Drain-Source ON Resistance
- RDS(ON) = 1.1Ω (Typ.)
- High Forward Transfer Admittance
- Yfs = 4.0S (Typ.)
- Low Leakage Current
- IDSS = 300µA (Max.) @ VDS = 720V
- Enhancement-Mode
- Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| K1358 | Inchange Semiconductor | N-Channel MOSFET Transistor |
| K135 | Hitachi Semiconductor | 2SK135 |
| K1350 | Unknown Manufacturer | 2SK1350 |
| K1351VC600 | IXYS | Medium Voltage Thyristor |
| K1351VC640 | IXYS | Medium Voltage Thyristor |