K1381 Datasheet | Toshiba

2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2- π- MOSIII) 2SK1381 Relay Drive, Motor Drive and DC- DC Converter Applications 4 V gate drive Low drain- source ON resistance High forward transfer admittance Low leakage current .. Enhancement- mode : RDS (ON) = 25 mΩ (typ.) : |Yfs| = 33 S (typ.) : IDSS = 100 µA (max) (VDS = 100 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 m A) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 100 100 ±20 50 200 150 150 - 55~150 Unit V V V A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-16C1B Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch- c) Rth (ch- a) Max 0.833 50 Unit °C / W °C / W Weight: 4.6 g (typ.) Note 1: Please use devices on condition that the channel temperature is below 150°C. This transistor is an electrostatic sensitive device. Please handle with caution. 2002-09-02 2SK1381 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut- off current Drain- source breakdown voltage Gate threshold voltage Drain- source ON resistance Forward transfer admittance Input capacitance .. Reverse transfer capacitance Output capacitance Rise time Turn- on time Switching time Fall time tf toff Qg Qgs Qgd VDD ≈ 80 V, VGS = 10 V, ID = 50 A - 60 - Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±20 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 m A, VGS = 0 V VDS = 10 V, ID = 1 m A VGS = 4 V, ID = 25 A VGS = 10 V, ID = 25 A VDS = 10 V, ID = 25 A Min - - 100 0.8 - - 20 - - - - - Typ. - - - - 31 25 33 3700 580 1500 16 46 Max ±50 100 - 2.0 46 32 - - - - - - ns p F Unit n A µA V...