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2SK1381
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII)
2SK1381
Relay Drive, Motor Drive and DC−DC Converter Applications
4 V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current www.DataSheet4U.com Enhancement−mode : RDS (ON) = 25 mΩ (typ.) : |Yfs| = 33 S (typ.) : IDSS = 100 µA (max) (VDS = 100 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 100 100 ±20 50 200 150 150 −55~150 Unit V V V A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3.
K1381 Datasheet
