Datasheet Summary
2SK1365
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSII.5)
2SK1365
Switching Power Supply Applications z Low drain- source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
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