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2SK1365
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1365
Switching Power Supply Applications
z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD Tch Tstg
1000 1000 ±20
7 21 90 150 −55 to 150
V V V
A
W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-16F1B
Weight: 5.
K1365 Datasheet
