Part number:
K13A25D
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
228.23 KB
Description:
Tk13a25d.
* (1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK13A25D TO-220SIS 1: Gate (G) 2: Drain (D) 3: Source (S) 1 2011-10-10 Rev.2.0
K13A25D
Toshiba ↗ Semiconductor
228.23 KB
Tk13a25d.
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