K13A25D Datasheet, Toshiba Semiconductor

(1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V.

* Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) (2) Low leaka.