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MG150J1ZS50 - Silicon N Channel IGBT

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MG150J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1ZS50 High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) l Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 150A) Unit: mm Equivalent Circuit JEDEC JEITA TOSHIBA ― ― 2-95A3A www.DataSheet4U.com Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Reverse voltage Collector current DC 1ms DC 1ms Symbol VCES VGES VR IC ICP IF IFM PC Tj Tstg VIsol ― Rating 600 ±20 600 150 300 150 300 780 150 −40 ~ 125 2500 (AC 1 min.
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