MG150J7KS60
MG150J7KS60 is GTR MODULE SILICON N CHANNEL IGBT manufactured by Toshiba.
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TOSHIBA GTR Module Silicon N Channel IGBT
MG150J7KS60 (600V/150A 7in1)
High Power Switching Applications Motor Control Applications
- -
- - Integrates inverter and brake power circuit into a single package The electrodes are isolated from case. Low thermal resistance VCE (sat) = 1.6 V (typ.)
Equivalent Circuit
P 14 3 15 B 4 7 8 11 12 U V W
16 20 N
Signal Terminal
1. 5. 9. Open Open Open 2. 6. Open Open 3. 7. G (U) G (V) 4. 8. E (U) E (V)
10. Open 14. TH1 18. G (Y)
11. G (W) 15. TH2 19. G (Z)
12. E (W) 16. G (B) 20. E (L)
13. Open 17. G (X)
2001-10-03
Package Dimensions: 2-108G1B
1. 5. 9.
Open Open Open
2. 6.
Open Open
3. 7.
G (U) G (V)
4. 8.
E (U) E (V)
10. Open 14. TH1 18. G (Y)
11. G (W) 15. TH2 19. G (Z)
12. E (W) 16. G (B) 20. E (L)
13. Open 17. G (X)
2001-10-03
Maximum Ratings (Ta = 25°C)
Stage Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25°C) Collector-emitter voltage Gate-emitter voltage DC Collector current 1 ms Brake Collector power dissipation (Tc = 25°C) Reverse voltage DC Forward current 1 ms Junction temperature Storage temperature range Module Isolation voltage Terminal Screw torque Mounting 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VCES VGES IC ICP PC VR IF IFM Tj Tstg Visol ¾ ¾ Rating 600 ±20 150 A 300 150 A 300 750 600 ±20 75 A 150 375 600 75 A 150 150 -40~125 2500 (AC 1 min) 2 (M4) 3 (M5) °C °C V N･m W V W V V Unit V V
Electrical Characteristics (Tj = 25°C)
1. Inverter stage
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Switching time Turn-off time Fall time Reverse recovery time Forward voltage Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) toff tf trr VF IF = 150 A VCC = 300 V, IC = 150 A VGE = ±15 V, RG = 15 W (Note 1) Test Condition VGE =...
