MG150J1ZS50 Description
MG150J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1ZS50 High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a plete half bridge in one package. l Enhancement-mode l High speed.
MG150J1ZS50 Key Features
- The electrodes are isolated from case
- High input impedance
- Includes a plete half bridge in one package
- Enhancement-mode
- High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A)
- Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 150A) Unit: mm Equivalent Circuit JEDEC JEITA TOSHIBA