MG150J1ZS50 Datasheet | Toshiba

TOSHIBA GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a plete half bridge in one package. l Enhancement-mode l High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) l Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 150A) Unit: mm Equivalent Circuit JEDEC JEITA TOSHIBA ― ― 2-95A3A .. Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Reverse voltage Collector current DC 1ms DC 1ms Symbol VCES VGES VR IC ICP IF IFM PC Tj Tstg VIsol ― Rating 600 ±20 600 150 300 150 300 780 150 - 40 ~ 125 2500 (AC 1 min.) 3/3 Unit V V V A Forward current A W °C °C V N- m Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) 2001-08-16 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturationvoltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Reverse current Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff IR VF trr Rth (j-c) VR = 600V IF = 150A, VGE = 0 IF = 150A, VGE = - 10V di / dt = 200A / µs Transistor stage Diode stage Inductive load VCC = 300V IC = 150A, VGE = ±15V RG = 6.2Ω (Note 1) Test Condition VGE = ±20V, VCE = 0 VCE = 600V, VGE = 0 IC = 15m A, VCE = 5V IC = 150A,VGE = 15V VCE = 10V, VGE = 0, f = 1MHz Min ― ― 5.0 ― ― ― ― ― ― ― ― ― ― ― ― ― Typ. ― ― 7.0 2.10 14200 0.15 0.15 0.50 0.20 0.15 0.50 ― 2.30 0.08 ― ― Max ±500 2.0 8.0 2.70 ― 0.30 0.30 1.00 0.40 0.30 1.00 1.0 3.00 0.15 0.16 0.35 m A V µs °C / W µs Unit n A m A V V p F Note 1: Switching time test circuit & timing chart Note 2: Silicone grease is...