MG150Q2YS65H Datasheet | Toshiba

TOSHIBA IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications Unit: mm - High input impedance - Enhancement-mode - The electrodes are isolated from case. Equivalent Circuit .. E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 255 g (typ.) ― ― 2-95A4A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal Mounting ¾ ¾ Rating 1200 ±20 150 300 150 300 890 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A Forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque A W °C °C V N- m 2002-10-04 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Symbol IGES ICES VGE (OFF) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth (j-c) Turn-on Switching loss Turn-off Eon Eoff IF = 150 A, VGE = 0 IF = 150 A, VGE = -10 V, di/dt = 700 A/ms Transistor stage Diode stage Inductive load VCC = 600 V, IC = 150 A VGE = ±15 V, RG = 5.6 W Tc = 125°C Inductive load VCC = 600 V, IC = 150A VGE = ±15 V, RG = 5.6 W Test Condition VGE = ±20 V, VCE = 0 VCE = 1200 V, VGE = 0 VCE = 5 V, IC = 150 m A IC = 150 A, VGE = 15 V Tc = 25°C Tc = 125°C Min ¾ ¾ 4.0 ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ 3.0 3.6 12800 0.05 0.05 0.10 0.55 0.05 0.60 2.4 0.1 ¾ ¾ 15 12 Max ±500 2.0 7.0 4.0 ¾ ¾ ¾ ¾ ¾ ¾ 0.15 ¾ 3.5 ¾ 0.14 0.28 ¾ ¾ V ms °C/W ms Unit n A m A V V p F VCE = 10 V, VGE = 0, f = 1 MHz .. Forward voltage Turn-off time Reverse recovery time Thermal resistance m J Note: Switching time measurement circuit and input/output waveforms RG -VGE IC RG VGE 0 90% 10% trr VCC IC VCE 0 10% td (off) toff tf...