MG150Q2YS65H - High Power & High Speed Switching Applications

Toshiba

Datasheet Details

Part number	MG150Q2YS65H
Manufacturer	Toshiba
File Size	190.00 KB
Description	High Power & High Speed Switching Applications
Datasheet	MG150Q2YS65H Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MG150Q2YS40	N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)	Toshiba
MG150Q2YS50	N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)	Toshiba
MG150Q2YS51	N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)	Toshiba
MG150Q2YK1	TRANSISTOR MODULES	ETC
MG150Q1JS40	N CHANNEL IGBT (HIGH POWER SWITCHING / CHOPPER APPLICATIONS)	Toshiba

Other Datasheets by Toshiba

Part Number	Description
MG150J1ZS50	Silicon N Channel IGBT
MG150J7KS60	GTR MODULE SILICON N CHANNEL IGBT
MG15C4MNI	OUT LINE BQUIVALRN
MG100Q2YS1	Silicon N-Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Unit: mm · High input impedance · Enhancement-mode · The electrodes are isolated from case. Equivalent Circuit www.DataSheet4U.com E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 255 g (typ.