MG150Q2YS65H datasheet by Toshiba.
| Part number | MG150Q2YS65H |
|---|---|
| Datasheet | MG150Q2YS65H_ToshibaSemiconductor.pdf |
| File Size | 190.00 KB |
| Manufacturer | Toshiba |
| Description | High Power & High Speed Switching Applications |
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MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Unit: mm · High input impedance · Enhancement-mode · The electrodes are isolated from case. E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight:.
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