MG150Q2YS65H Overview
TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Unit: mm · High input impedance · Enhancement-mode · The electrodes are isolated from case. Equivalent Circuit
Datasheet Details
| Part number | MG150Q2YS65H |
|---|---|
| Manufacturer | Toshiba |
| File Size | 190.00 KB |
| Description | High Power & High Speed Switching Applications |
| Datasheet | MG150Q2YS65H_ToshibaSemiconductor.pdf |
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