MT3S111 - Silicon-Germanium NPN Epitaxial Planar Type Transistor

Toshiba Semiconductor

Datasheet Details

Part number	MT3S111
Manufacturer	Toshiba Semiconductor
File Size	290.31 KB
Description	Silicon-Germanium NPN Epitaxial Planar Type Transistor
Datasheet	MT3S111-ToshibaSemiconductor.pdf

Low-Noise Figure: NF=0.9 dB (typ. ) (@ f=1 GHz).
High Gain:|S21e|2=12 dB (typ. ) (@ f=1 GHz) MT3S111 Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range Symbol VCES VCEO VEBO IC IB PC PC (Note 1) Tj Tstg Rating 13 6 0.6 100 10 160 700 150.

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Published: Jun 14, 2016 |