SSM3K318T - Silicon N-Channel MOSFET

Datasheet Details

Part number	SSM3K318T
Manufacturer	Toshiba Electronic Devices & Storage
File Size	266.98 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K318T Datasheet
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SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K318T ○ Load Switching Applications ○ High-Speed Switching Applications • 4.5 V drive • Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V) +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 0～0.1 0.15 0.16±0.05 2.9±0.2 1.9±0.2 0.95 0.95 Absolute Maximum Ratings (Ta = 25°C) １ Characteristic Symbol Rating Unit ２３ Drain-Source voltage VDSS 60 V Gate-Source voltage VGSS ±20 V 0.7±0.05 Drain current DC ID Pulse IDP 2.5 A 5.0 Drain power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 1: Gate Note: Using continuously under heavy loads (e.g.

Published: Jul 21, 2010 |