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SSM6L05FU - MOSFET

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SSM6L05FU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications Unit: mm • • • Small package Low on resistance Q1: Ron = 0.8 Ω (max) (@VGS = 4 V) Q2: Ron = 3.3 Ω (max) (@VGS = −4 V) Low gate threshold voltage Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating 20 ±12 400 800 Unit V V mA Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating −20 ±12 −200 −400 Unit V V mA JEDEC JEITA TOSHIBA ― ― 2-2J1C Weight: 6.8 mg (typ.
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