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SSM6L09FU - Silicon N/P-Channel MOSFET

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SSM6L09FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type(π-MOSVI) SSM6L09FU Power Management Switch High Speed Switching Applications Unit: mm • Small package • Low on-resistance Q1: RDS(ON) = 0.7 Ω (max) (@VGS = 10 V) Q2: RDS(ON) = 2.7 Ω (max) (@VGS = −10 V) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating Unit 30 V ±20 V 400 mA 800 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating Unit −30 V ±20 V −200 mA −400 JEDEC ― JEITA ― TOSHIBA 2-2J1C Weight: 6.8 mg (typ.
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