Datasheet4U Logo Datasheet4U.com

SSM6L11TU - Silicon Dual-Channel MOSFET

📥 Download Datasheet

Datasheet preview – SSM6L11TU

📁 Similar Datasheet

  • SSM60T03GH - N-channel Enhancement-mode Power MOSFET (Silicon Standard)
  • SSM60T03GJ - N-channel Enhancement-mode Power MOSFET (Silicon Standard)
  • SSM60T03GP - N-channel Enhancement-mode Power MOSFET (Silicon Standard)
  • SSM60T03GS - N-channel Enhancement-mode Power MOSFET (Silicon Standard)
  • SSM60T03H - N-Channel Enhancement Mode Power MOSFET (Silicon Standard)
  • SSM60T03J - N-Channel Enhancement Mode Power MOSFET (Silicon Standard)
  • SSM630GP - N-channel Enhancement-mode Power MOSFET (Silicon Standard)
  • SSM6322 - Integrated Stereo Audio Amplifier (Analog Devices)
  • SSM6618M - N-channel Enhancement-mode Power MOSFET (Silicon Standard)
  • SSM6679GM - P-channel Enhancement-mode Power MOSFET (Silicon Standard)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications • Optimum for high-density mounting in small packages • Low ON-resistance Q1: RDS(ON) = 395mΩ (max) (@VGS = 1.8 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25°C) 2.1±0.1 1.7±0.1 Unit: mm +0.1 0.3-0.05 Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS ± 12 V Drain current DC ID Pulse IDP 0.5 A 1.5 Q2 Absolute Maximum Ratings (Ta = 25°C) 2.0±0.1 1.3±0.1 0.65 0.65 1 6 2 5 3 4 +0.06 0.16-0.05 0.7±0.05 Characteristics Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ± 12 V Drain current DC ID -0.5 A Pulse IDP -1.
Published: |