Full PDF Text Transcription for SSM6L14FE (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SSM6L14FE. For precise diagrams, and layout, please refer to the original PDF.
SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE ○ Power Management Switch Applications ○ High-Speed Switching Applications • N-ch: 1.5-...
View more extracted text
t Switch Applications ○ High-Speed Switching Applications • N-ch: 1.5-V drive P-ch: 1.5-V drive • N-ch, P-ch, 2-in-1 • Low ON-resistance Q1 N-ch:RDS(ON) = 330 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 240 mΩ (max) (@VGS = 4.5 V) Q2 P-ch:RDS(ON) = 440 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 300 mΩ (max) (@VGS = -4.5 V) Q1 Absolute Maximum Ratings (Ta = 25°C) 1.6±0.05 1.0±0.05 0.5 0.5 Unit: mm 1.6±0.05 1.2±0.05 1 6 2 5 3 4 0.2±0.05 0.12±0.05 Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse VDSS 20 V VGSS ±10 V ID 0.8 A IDP 1.
SSM6L14FE Datasheet
