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SSM6L36TU - Dual-Channel MOSFET

Features

  • VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °.

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Full PDF Text Transcription

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SSM6L36TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36TU ○ High-Speed Switching Applications • • 1.5-V drive 0.65 0.65 Unit: mm 2.1±0.1 1.7±0.1 Ron = 1.14Ω (max) (@VGS = 1.8 V) Ron = 0.85Ω (max) (@VGS = 2.5 V) Ron = 0.66Ω (max) (@VGS = 4.5 V) Ron = 0.63Ω (max) (@VGS = 5.0 V) Ron = 2.70Ω (max) (@VGS = -1.8 V) Ron = 1.60Ω (max) (@VGS = -2.8 V) Ron = 1.31Ω (max) (@VGS = -4.5 V) 2 3 5 4 0.7±0.05 Q2 P-ch: Ron = 3.60Ω (max) (@VGS = -1.5 V) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain–source voltage Gate–source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating 20 ±10 500 1000 Unit V V mA 1.Source1 4.Source2 5.Gate2 2.Gate1 UF6 JEDEC JEITA 3.Drain2 6.
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