SSM6L36FE Datasheet | Toshiba

SSM6L36FE .. TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type ○ High-Speed Switching Applications - - 1.5-V drive Low ON-resistance Q1 Nch: Ron = 1.52Ω (max) (@VGS = 1.5 V) Ron = 1.14Ω (max) (@VGS = 1.8 V) Ron = 0.85Ω (max) (@VGS = 2.5 V) Ron = 0.66Ω (max) (@VGS = 4.5 V) Ron = 0.63Ω (max) (@VGS = 5.0 V) Q2 Pch: Ron = 3.60Ω (max) (@VGS = -1.5 V) Ron = 2.70Ω (max) (@VGS = -1.8 V) Ron = 1.60Ω (max) (@VGS = -2.8 V) Ron = 1.31Ω (max) (@VGS = -4.5 V) 1.6±0.05 1.2±0.05 Unit: mm 1.6±0.05 1.0±0.05 0.5 0.5 1 2 3 6 5 4 0.2±0.05 0.12±0.05 - 0.55±0.05 Q1...