SSM6L36TU Overview
SSM6L36TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36TU ○ High-Speed Switching Applications 1.5-V drive 0.65 0.65 Unit: 7.0 mg (typ.) Ratings (Ta = 25 °C) (mon to the Q1, Q2) Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol PD(Note 1) Tch Tstg Rating 500 150 −55 to 150 Unit mW °C °C Note: Using continuously under heavy loads (e.g.