SSM6L35FU Datasheet | Toshiba

TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type ○ High-Speed Switching Applications ○ Analog Switch Applications - - - N-ch: 1.2-V drive P-ch: 1.2-V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch: Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = : Ron = : Ron = 8 Ω (max) (@VGS = 1.5 V) 4 Ω (max) (@VGS = 2.5 V) 3 Ω (max) (@VGS = 4.0 V) Unit: mm Q2 P-ch: Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V) 1.SOURCE 1 4.SOURCE 2 5.GATE 2 6.DRAIN 1 2.GATE 1 3.DRAIN 2 Rating 20 ±10 180 360 Unit V V mA Q1...