SSM6L807R Datasheet, Toshiba Semiconductor

(1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P-cha.

* Power Management Switches 2. Features (1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@V.