Datasheet Summary
MOSFETs Silicon P-/N-Channel MOS
1. Applications
- Power Management Switches
2. Features
(1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P-channel: RDS(ON) = 45 mΩ (max) (@VGS = -10 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V)
3. Packaging and Internal Circuit
TSOP6F
1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1
©2018-2019 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2018-11
2019-01-31 Rev.3.0
4. Absolute Maximum...