SSM6L807R - Silicon Dual-Channel MOSFET

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Toshiba Semiconductor

Part number	SSM6L807R
Manufacturer	Toshiba Semiconductor
File Size	545.99 KB
Description	Silicon Dual-Channel MOSFET
Datasheet	SSM6L807R Datasheet
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(1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P-channel: RDS(ON) = 45 mΩ (max) (@VGS = -10 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) 3. Packaging and Internal Circuit TSOP6F SSM6L807R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2018-2019 Toshiba Electronic Devices & Storage Corpo.

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Published: Dec 26, 2023 |