SSM6L820R Datasheet | Toshiba

Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P-channel: RDS(ON) = 45 mΩ (max) (@VGS = -10 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) 3. Packaging and Internal Circuit 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 TSOP6F 4. Orderable part number Orderable part number AEC-Q101 Note SSM6L820R,LF SSM6L820R,LXGF SSM6L820R,LXHF - YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) ©2018-2021 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2018-11 2021-06-03 Rev.3.0 5. Absolute Maximum Ratings (Note) 5.1. Q1 Absolute Maximum Ratings (Unless otherwise specified, Ta = 25 - ) Characteristics Symbol Rating Unit Drain-source voltage VDSS Gate-source voltage VGSS +12/-8 Drain current (DC) (Note 1) Drain current (pulsed) (t ≤ 10 ms) (Note 1), (Note...