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SSM6L820R - Silicon Dual-Channel MOSFET

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P-channel: RDS(ON) = 45 mΩ (max) (@VGS = -10 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) 3. Packaging and Internal Circuit SSM6L820R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: D.

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Datasheet Details

Part number SSM6L820R
Manufacturer Toshiba
File Size 551.55 KB
Description Silicon Dual-Channel MOSFET
Datasheet download datasheet SSM6L820R Datasheet

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Full PDF Text Transcription

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MOSFETs Silicon P-/N-Channel MOS SSM6L820R 1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P-channel: RDS(ON) = 45 mΩ (max) (@VGS = -10 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) 3. Packaging and Internal Circuit SSM6L820R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 TSOP6F 4.
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