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SSM6L807R - Silicon Dual-Channel MOSFET

Features

  • (1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P-channel: RDS(ON) = 45 mΩ (max) (@VGS = -10 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) 3. Packaging and Internal Circuit TSOP6F SSM6L807R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2018-2019 Toshiba Electronic Devices & Storage Corpo.

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Datasheet Details

Part number SSM6L807R
Manufacturer Toshiba
File Size 545.99 KB
Description Silicon Dual-Channel MOSFET
Datasheet download datasheet SSM6L807R Datasheet

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Full PDF Text Transcription

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MOSFETs Silicon P-/N-Channel MOS SSM6L807R 1. Applications • Power Management Switches 2. Features (1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P-channel: RDS(ON) = 45 mΩ (max) (@VGS = -10 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) 3. Packaging and Internal Circuit TSOP6F SSM6L807R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2018-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2018-11 2019-01-31 Rev.3.0 SSM6L807R 4. Absolute Maximum Ratings (Note) 4.1.
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