SSM6L807R Datasheet | Toshiba

Features (1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P-channel: RDS(ON) = 45 mΩ (max) (@VGS = -10 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) 3. Packaging and Internal Circuit TSOP6F 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2018-2019 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2018-11 2019-01-31 Rev.3.0 4. Absolute Maximum Ratings (Note) 4.1. Q1 Absolute Maximum Ratings (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS Gate-source voltage (Note 3) VGSS ±12 Drain current (DC) (Note 1) Drain current (pulsed) (Note 1), (Note 2) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1 % Note 3: Reverse bias between gate and source is guaranteed with pulse rating. 4.2. Q2 Absolute Maximum Ratings (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 Gate-source...