SSM6L820R - Silicon Dual-Channel MOSFET

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Toshiba Semiconductor

Part number	SSM6L820R
Manufacturer	Toshiba Semiconductor
File Size	551.55 KB
Description	Silicon Dual-Channel MOSFET
Datasheet	SSM6L820R Datasheet
Additional preview pages of the SSM6L820R datasheet.

(1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P-channel: RDS(ON) = 45 mΩ (max) (@VGS = -10 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) 3. Packaging and Internal Circuit SSM6L820R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: D.

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Published: Dec 26, 2023 |