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SSM6N35FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N35FE
○ High-Speed Switching Applications ○ Analog Switch Applications
• 1.2-V drive • N-ch 2-in-1 • Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V)
: Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V)
1.6±0.05 1.0±0.05 0.5 0.5
1.6±0.05 1.2±0.05
Unit: mm
1
6
2
5
3
4
0.2±0.05
0.12±0.05
0.55±0.05
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain–source voltage Gate–source voltage
Drain current
DC Pulse
VDSS VGSS
ID IDP
20
V
±10
V
180 mA
360
ES6
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.
SSM6N35FE Datasheet
