SSM6N357R - Silicon N-channel MOSFET

Toshiba

Key Features

(1) AEC-Q101 qualified (Note 1) (2) 3.0-V gate drive voltage. (3) Built-in Internal Zener diodes and resistors. Note 1: For detail information, please contact our sales. 3. Packaging and Pin Assignment TSOP6F SSM6N357R ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation 2021-01-07 Rev.4.0 SSM6N357R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 60 V VGSS ±12.

SSM6N357R silicon n-channel mosfet by Toshiba - Datasheet Preview

Datasheet Details

Part number	SSM6N357R
Manufacturer	Toshiba
File Size	449.07 KB
Description	Silicon N-channel MOSFET
Datasheet	SSM6N357R Datasheet

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MOSFETs Silicon N-Channel MOS SSM6N357R 1. Applications • Relay Drivers 2. Features (1) AEC-Q101 qualified (Note 1) (2) 3.0-V gate drive voltage. (3) Built-in Internal Zener diodes and resistors. Note 1: For detail information, please contact our sales. 3. Packaging and Pin Assignment TSOP6F SSM6N357R ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation 2021-01-07 Rev.4.0 SSM6N357R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 60 V VGSS ±12 Drain current (DC) (Note 1) ID 650 mA Drain current (pulsed) (Note 1), (Note 2) IDP 1300 Power dissipation Power dissipation Channel temperature (t ≤ 10s) (Note 3) PD (Note 3) PD Tch 1 W 1.