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SSM6N48FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6N48FU
Load Switching Applications
Unit: mm
• 2.5-V drive • N-ch 2-in-1 • Low ON-resistance: RDS(ON) = 3.2 Ω (max) (@VGS = 4.0 V)
RDS(ON) = 5.4 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS
30
V
Gate-Source voltage
VGSS
±20
V
Drain current
DC Pulse
ID
100
mA
IDP
400
Power dissipation
PD (Note 1)
300
mW
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
JEDEC JEITA
― SC-88
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
TOSHIBA
2-2J1C
temperature, etc.
SSM6N48FU Datasheet
