SSM6N61NU
Features
(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V)
3. Packaging and Pin Assignment
UDFN6
1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1
©2016 Toshiba Corporation
Start of mercial production
2015-12
2016-08-31 Rev.3.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) (Q1,Q2 mon)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation t ≤ 10 s
(Note 1) (Note 1), (Note 2)
(Note 3) (Note 3)
VDSS VGSS
ID IDP PD
±8
Channel temperature Storage temperature
Tch
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause...
