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SSM6N61NU - Silicon N-Channel MOSFET

Key Features

  • (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Assignment UDFN6 SSM6N61NU 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 ©2016 Toshiba Corporation 1 Start of commercial production 2015-12 2016-08-31 Rev.3.0 SSM6N61NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ).

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Datasheet Details

Part number SSM6N61NU
Manufacturer Toshiba
File Size 340.07 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM6N61NU Datasheet

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MOSFETs Silicon N-Channel MOS SSM6N61NU 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Assignment UDFN6 SSM6N61NU 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 ©2016 Toshiba Corporation 1 Start of commercial production 2015-12 2016-08-31 Rev.3.0 SSM6N61NU 4.