SSM6N68NU
Features
(1) AEC-Q101 qualified (Note 1) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance
: RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 180 mΩ (max) (@VGS = 1.8 V)
Note 1: For detail information, please contact our sales.
3. Packaging and Pin Assignment
UDFN6
1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain 1
©2017-2021
Toshiba Electronic Devices & Storage Corporation
2021-01-07 Rev.2.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- ) (Q1,Q2 mon)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
12/-8
Drain current (DC)
(Note 1)
Drain current (pulsed)
(Note 1), (Note 2)
Power dissipation Power dissipation Channel temperature
(Note 3)
(t ≤ 10 s)
(Note 3)
Tch
- Storage temperature
Tstg
-55 to...
