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SSM6N62TU - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 67 mΩ (typ. ) (@VGS = 4.5 V) RDS(ON) = 74 mΩ (typ. ) (@VGS = 2.5 V) RDS(ON) = 84 mΩ (typ. ) (@VGS = 1.8 V) RDS(ON) = 94 mΩ (typ. ) (@VGS = 1.5 V) RDS(ON) = 121 mΩ (typ. ) (@VGS = 1.2 V) 3. Packaging and Pin Assignment SSM6N62TU 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 UF6 4. Orderable part number Orderable part number AEC-Q101 Note SSM6N62T.

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Datasheet Details

Part number SSM6N62TU
Manufacturer Toshiba
File Size 377.19 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM6N62TU Datasheet

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MOSFETs Silicon N-Channel MOS SSM6N62TU 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 67 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 74 mΩ (typ.) (@VGS = 2.5 V) RDS(ON) = 84 mΩ (typ.) (@VGS = 1.8 V) RDS(ON) = 94 mΩ (typ.) (@VGS = 1.5 V) RDS(ON) = 121 mΩ (typ.) (@VGS = 1.2 V) 3. Packaging and Pin Assignment SSM6N62TU 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 UF6 4.