• Part: SSM6N62TU
  • Description: Silicon N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Toshiba
  • Size: 377.19 KB
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Toshiba
SSM6N62TU
Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 67 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 74 mΩ (typ.) (@VGS = 2.5 V) RDS(ON) = 84 mΩ (typ.) (@VGS = 1.8 V) RDS(ON) = 94 mΩ (typ.) (@VGS = 1.5 V) RDS(ON) = 121 mΩ (typ.) (@VGS = 1.2 V) 3. Packaging and Pin Assignment 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 UF6 4. Orderable part number Orderable part number AEC-Q101 Note SSM6N62TU,LF SSM6N62TU,LXGF SSM6N62TU,LXHF - YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) ©2016-2021 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2016-04 2021-05-28 Rev.6.0 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 - ) (Q1,Q2 mon) Characteristics Symbol Rating Unit Drain-source voltage...