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SSM6N67NU - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (Note 1) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment UDFN6 SSM6N67NU 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain 1 ©2017 Toshiba Electronic Devices & Storage Corporation 1 2017-12-18 Rev.1.0 SSM6N67NU 4. Absolute Maximum Ra.

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Datasheet Details

Part number SSM6N67NU
Manufacturer Toshiba
File Size 259.81 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM6N67NU Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS SSM6N67NU 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Note 1) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment UDFN6 SSM6N67NU 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain 1 ©2017 Toshiba Electronic Devices & Storage Corporation 1 2017-12-18 Rev.1.0 SSM6N67NU 4.