SSM6N56FE Datasheet PDF (N-Channel MOSFET) | Download Toshiba SSM6N56FE

SSM6N56FE - N-Channel MOSFET

Features

(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V, ID = 200 mA) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V, ID = 50 mA) 3. Packaging and Pin Assignment ES6 SSM6N56FE 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 Start of commercial production 2014-03 1 2014-04-10 Rev.1.0 SSM6N56FE 4. Absolute Maximum Ratings (Note) (Unless other.

Datasheet Details

Part number	SSM6N56FE
Manufacturer	Toshiba
File Size	199.97 KB
Description	N-Channel MOSFET
Datasheet	SSM6N56FE Datasheet
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Full PDF Text Transcription

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MOSFETs Silicon N-Channel MOS SSM6N56FE 1. Applications • High-Speed Switching 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V, ID = 200 mA) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V, ID = 50 mA) 3. Packaging and Pin Assignment ES6 SSM6N56FE 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 Start of commercial production 2014-03 1 2014-04-10 Rev.1.0 SSM6N56FE 4.

Published: Dec 29, 2023 |