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SSM6N35FU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N35FU
○ High-Speed Switching Applications ○ Analog Switch Applications
Unit: mm
• 1.2-V drive • N-ch 2-in-1 • Low ON-resistance:
RDS(ON) = 20 Ω (max) (@VGS = 1.2 V) RDS(ON) = 8 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4 Ω (max) (@VGS = 2.5 V) RDS(ON) = 3 Ω (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDS
20
V
Gate–source voltage
VGSS
± 10
V
Drain current
DC
ID
Pulse
IDP
180 mA
360
1.Source 1 4.Source 2 2.Gate 1 5.Gate 2 3.Drain 2 6.
SSM6N35FU Datasheet
