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SSM6P40TU - MOSFET

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SSM6P40TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P40TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • • • 4.0 V driv...

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itch Applications ○ High-Speed Switching Applications • • • 4.0 V drive P-ch, 2-in-1 Low ON-resistance: Unit: mm 2.1±0.1 1.7±0.1 0.65 0.65 1 2 3 6 5 4 0.166±0.05 Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V) Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common) Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating -30 ± 20 -1.4 -2.8 500 150 −55 to150 Unit V V A mW °C °C 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 0.7±0.05 UF6 JEDEC ― Note: Using cont

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