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SSM6P41FE - P-Channel MOSFET

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SSM6P41FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS-V) SSM6P41FE ○ Power Management Switches • 1.5-V drive • Low on-resistance : RDS(ON) = 1.04 Ω (max) (@VGS = -1.5 V) : RDS(ON) = 0.67 Ω (max) (@VGS = -1.8 V) : RDS(ON) = 0.44 Ω (max) (@VGS = -2.5 V) : RDS(ON) = 0.30 Ω (max) (@VGS = -4.5 V) 1.6±0.05 1.2±0.05 Unit: mm 1.6±0.05 1.0±0.05 0.5 0.5 0.2±0.05 0.12±0.05 Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common) 1 6 Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range Symbol Rating Unit VDSS -20 V VGSS ±8 V ID -720 mA IDP -1440 PD (Note1) 150 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g.
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