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SSM6P47NU - MOSFET

Key Features

  • in this document, Unintended Use includes, without limitation, equipment used in nuclear.

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SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI) SSM6P47NU Power Management Switch Applications • • 1.5V drive Low ON-resistance: RDS(on) = ...

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ement Switch Applications • • 1.5V drive Low ON-resistance: RDS(on) = 242 mΩ (max) (@VGS = -1.5 V) RDS(on) = 170 mΩ (max) (@VGS = -1.8 V) RDS(on) = 125 mΩ (max) (@VGS = -2.5 V) RDS(on) = 95 mΩ (max) (@VGS = -4.5 V) 0.75±0.05 2.0±0.1 B A Unit: mm 2.0±0.1 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP (Note 1) PD t < 10s Tch Tstg Rating −20 ±8 −4.0 −8.0 1 2 150 −55 to 125 Unit 0～0.05 0.13 *BOTTOM VIEW 0.65 0.65 0.95 0.9±0.075 0.275±0.1 0.275±0.1 0.05 M A 1 2 3 V A 0.86 0.86 V 6 5 4 0.3±0.075 0.

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