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TC55257BFL Datasheet - Toshiba Semiconductor

TC55257BFL SILICON GATE CMOS STATIC RAM

TC55257BFL Features

* with an operating current of 5mNMHz fup.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 10Q.lA. The TC55257BPL has two control inputs. Chip enable (CE) allows for device selection and data retention contr

TC55257BFL_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TC55257BFL

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

224.98 KB

Description:

Silicon gate cmos static ram.

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TC55257BFL TC55257BFL SILICON GATE CMOS STATIC RAM Toshiba Semiconductor

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